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Thursday, October 15, 2020 | History

2 edition of Negative magnetoresistance effects due to the s--d interaction found in the catalog.

Negative magnetoresistance effects due to the s--d interaction

I. Nicoară

Negative magnetoresistance effects due to the s--d interaction

by I. Nicoară

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Published by Universitatea din Timișoara, Facultatea de Fizică in [Timișoara] .
Written in English

    Subjects:
  • Magnetoresistance.,
  • Nuclear reactions.,
  • Green"s functions.

  • Edition Notes

    StatementI. Nicoară.
    SeriesSolid state series
    Classifications
    LC ClassificationsQC761.5 .N5
    The Physical Object
    Pagination11 p. ;
    Number of Pages11
    ID Numbers
    Open LibraryOL4629821M
    LC Control Number77461163

    (Fig) s-d interaction is too weak. It is said that "spins" of 3d and 4s electrons are interacting with each other and cause various macro effects in materials. But like Fig, this s-d spin interaction is too weak, when we think spin magnetic moment is involved in this effect. (Fig) s-d interaction is too weak. Quantum effects have already delivered many products since they are the basis of the GMR effect (Table ) that underlies the recent surge of extremely higher densities in hard disks; nevertheless they are slated for other deeper developments geared toward the building of the basic parts of the quantum computer and quantum communication devices. The quantum computer is based on the qubit or Author: Charbel Tannous, Jacek Gieraltowski.

    effects semiconductors films lattice dependence anisotropy magnetoelastic magn superconducting ohno superconductivity magnetization canfield coupling interaction magnetic semiconductors matsukura axis appl alloys temperatures magnetic field. Anomalies in Static Magnetoresistance due to Magnetic Surface Levels, JETP Letters, 42, No 1, pp. () (with L.D. Shvartsman). 1. Localized States of Electron near the Surface of Low-Frequency Polarizable Dielectric, Poverchnost, No 9, pp. () (with V.M. Nabutovskii, in Russian).

      The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial by: This implies that the important effects of quantum transport, which could have been seen at room temperature in atomic-scale devices, would require helium temperatures (K), or even sub-kelvin temperatures, to be seen in devices of micrometer Size: 7MB.


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Negative magnetoresistance effects due to the s--d interaction by I. Nicoară Download PDF EPUB FB2

Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic are a variety of effects that can be called magnetoresistance.

Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov de Haas oscillations, or the common positive. Negative magnetoresistance in dilute magnetic alloys has been ascribed by Yosida (31 to the scattering of conduction electrons by localized impurity electrons, involving the s-d exchange interaction.

Toyozawa [4] investigated theoretically the existence of such localized spins in the metallic impurity band; his model may be applied to Insb as : G. Benford. We report a large negative magnetoresistance in Manganese-substituted Zinc Oxide thin films. This anomalous effect was found to appear in oxygen-deficient films and to increase with the Cited by: Magnetic sensors are based on physical effects that relate an electrical resistance directly to an external magnetic field, namely the GMR and the tunneling magnetoresistance effect in ultrathin multilayered film stacks.

These physical effects have been intensively explored within the field of magneto- and spin electronics due to their. Effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors Article (PDF Available) in Physical review.

B, Condensed matter 85(24) June with 20 ReadsAuthor: Nicholas Harmon. The experimental results exhibit a negative magnetoresistance that we attribute to quantum interference effects due to time reversed electron paths and known as weak localization.

After percolation threshold (x: at.%) the composites exhibit isotropic negative magnetoresistance (-0,2 %) which has not tunneling nature. Also weak localization is realized in these samples at temperatures below K. At high metal concentration (32 at.%. Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystals due to an s-d interactin in Cu-Mn Alloys.

Phys. Possible magnetic-polaron. @article{osti_, title = {Current-direction dependence of the transport properties in single-crystalline face-centered-cubic cobalt films}, author = {Xiao, X. and Liang, J. and Chen, B. and Li, J. and Ding, Z.

and Wu, Y. Z., E-mail: [email protected] and Ma, D. H.}, abstractNote = {Face-centered-cubic cobalt films are. The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure).

The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the Cited by: Magnetoresistance is the tendency of a material to change the value of its electrical resistance in an externally-applied magnetic field.

There are a variety of effects that can be called magnetoresistance:Also called magneto resistance effect; some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov de Haas oscillations, or the Language family: Tyrsenian?, Etruscan.

Obtaining highly sensitive ferromagnetic, FM, and nonmagnetic, NM, multilayers with a large room-temperature magnetoresistance, MR, and strong magnetic anisotropy, MA, under a small externally applied magnetic field, H, remains a subject of scientific and technical interest.

Recent advances in nanofabrication and characterization techniques have further opened up several new ways through Cited by: 9. Description; Chapters; Supplementary; This volume contains contributions presented at the 12th International Conference on High Magnetic Fields in Semiconductor Physics.

Magnetoresistance due to Electron Interaction We have discussed earlier how even a weak magnetic field can suppress the localization effects resulting in a negative magnetoresistance. In the language of many-body theory, weak localization effects arise from the particle-particle channel and are supposed to be sensitive to magnetic flux.

Moving electrons are associated with handedness by their own spins due to spin–orbit interaction thus exhibiting various emergent phenomena as they interact with chiral materials, which otherwise would not be observed in achiral systems.

Since spintronics was born in the wake of the discovery of giant magnetoresistance S.-M. Ahn, E. Journal of Biomimetics, Biomaterials and Biomedical Engineering Materials Science. Defect and Diffusion Forum. Theory and practice of uncommon molecular electronic configurations. Ganna Gryn'ova.

10 This ensures that the configurations with high Coulomb repulsion are avoided and is reflected in the exchange interaction K xy. The corresponding shortage of the electron of a certain spin in the vicinity of another electron of the same spin is known as Cited by:   The fundamental problems addressed include effects of static and dynamic interactions with phonons, Coulomb interaction, new magnetic effects due to coherent scattering, effects of high electric fields, and relaxation phenomena.

Contents: Capacitance Measurements of the Dynamics of Screening in the Electron Glass (D Monroe). @article{osti_, title = {Effects of magnetic field and pressure in magnetoelastic stress reconfigurable thin film resonators}, author = {Staruch, M.

and Bussmann, K. and Finkel, P. and Kassner, C. and Lofland, S. and Fackler, S. and Takeuchi, I. and Dolabdjian, C. and UCBN, GREYC, F Caen and CNRS, UMRF Caen and Lacomb, R.}, abstractNote = {Free-standing CoFe.

Apart from its obvious interest from a basic science standpoint, control and eventual switching of the magnetization without applying any external magnetic field (or spin polarized current) has the potential to drastically reduce the power consumption of magnetic devices due to the lack (or minimization) of Joule heating dissipation by: 7.

the ordinary component due to the Lorentz force and the anomalous (or extraordinary) one arising from asymmetric or skew scattering negative magnetoresistance, and AHE are observed near the temperature Tc ' direct s-d interaction, (4) s-d mixing interaction, (5) intrinsic spin-orbit interaction, and (6) mixed spin-orbit coupling.The aim of the present paper is the mathematical study of a linear Boltzmann equation with different matrix collision operators, modelling the spin-polarized, semi-classical electron transport in non-homogeneous ferromagnetic structures.

In the collision kernel, the scattering rate is generalized to a hermitian, positive-definite $2\times2$ matrix whose eigenvalues stand for the different Cited by: Anomalies in Static Magnetoresistance due to Magnetic Surface Levels, JETP Letters, 42, No 1, pp.

() (with L.D. Shvartsman). Localized States of Electron near the Surface of Low-Frequency Polarizable Dielectric, Poverchnost, No 9, pp. () (with V.M. Nabutovskii, in Russian). Publications in Conference Proceedings.